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ion implantation

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ion implantation 離子注入技術〔制造半導體的一個程序〕。

離子注入技術〔制造半導體的一個程序〕。 “ion“ 中文翻譯：   n. 【物理學】離子。 positive [negati ...“implantation“ 中文翻譯：   n. 1.種植。 2.插入；灌輸，鼓吹。 3.【醫學】皮 ...“implantation, ion“ 中文翻譯：   離子注入“angled ion implantation“ 中文翻譯：   傾斜離子注入“bipolar ion implantation“ 中文翻譯：   雙極型掐用離子注入“channel ion implantation“ 中文翻譯：   溝道離子注入“cmos ion implantation“ 中文翻譯：   互補金屬氧化半導體離子植入法“diffusion and ion implantation“ 中文翻譯：   雜質植入“emitter ion implantation“ 中文翻譯：   發射區離子注入“high dosage ion implantation“ 中文翻譯：   高劑量離子注入“high energy ion implantation“ 中文翻譯：   高能離子注入“ion implantation annealing“ 中文翻譯：   離子注入后退火“ion implantation apparatus“ 中文翻譯：   離子注入機“ion implantation damage“ 中文翻譯：   離子注入損傷“ion implantation doping“ 中文翻譯：   離子注入摻雜“ion implantation dosage“ 中文翻譯：   離子注入劑量“ion implantation equipment“ 中文翻譯：   離子植入機“ion implantation gettering“ 中文翻譯：   離子注入吸除“ion implantation laboratory“ 中文翻譯：   離子注入實驗室“ion implantation logic“ 中文翻譯：   離子注入邏輯“ion implantation machine“ 中文翻譯：   離子注入機“ion implantation mask“ 中文翻譯：   離子注入掩膜“ion implantation profile“ 中文翻譯：   離子注入分布圖“ion implantation technology“ 中文翻譯：   離子注入工藝“ion-implantation laboratory“ 中文翻譯：   離子注入實驗室

ion rocket

In order to probe the reason of the obvious improvement in the biocompatibility of implanted pp , the surface chemical structure was characterized . results showed that cooh + ion implantation caused the formation of some new o - containing groups , which was responsible for the enhancement of the biocompatibility of pp 離子注入后聚丙烯表面的細胞吸附性研究表明，通過對pp表面進行cooh ~ +離子注入處理，三種細胞的生長形態要比未處理的pp樣品優良，這顯然與表面化學結構的變化和親水性的改善密切相關。

For instance , the dwarf character in the plants treated with the dose of 80 x1015 was stable in inheritance in consecutive three generations . thus it can be seen that low - energy ion implantation causes developmental state changes and phenotypic variations and some changes and variations can be inherited stably 以上結果充分顯示低能離子能夠引起生物體dna產生變異，從而導致表型的變異，是一種有效的誘變劑，表明離子柬生物技術是一種非常有效的物理誘變技術，在生產實際中具有廣泛的應用價值。

We also investigated the effect of c on the samples formed by ion implantation of mn and c . we studied the samples “ crystal structure and surface appearance by x - ray diffraction and afm , experimental results revealed that with increasing the annealing temperature , the crystal lattice reformed and defect in the surface reduced gradually 還進行了mn ~ + 、 c雙離子注入，研究了c對樣品性質的影響。利用x -射線衍射法和原子力顯微鏡對樣品的晶體結構和表面形貌進行了研究。發現隨著退火溫度的升高，樣品的晶格質量得以恢復；注入表面形成的晶格缺陷逐漸減少。

In the experimental studies on the behaviors of helium in aluminum , ion implantation technique was adopted to introduce helium with different energies , doses and distributions into some specimen of monocrystal , polycrystal , and preferred orientation as to the structure of aluminum . the energies varied in the range of 50ev to 4 . 87mev . the corresponding helium peak depths by trim simulation varied in the range of 16 angstrom to 20 . 7 microns 在金屬鋁中氦行為的實驗研究中，首先用離子注入技術在單晶、多晶以及擇優取向的鋁樣品中引入不同能量、劑量和濃度分布的he原子，能量范圍從50ev 4 . 87mev ， trim模擬的he濃度峰值的深度范圍為16 (

In the current experimental parameter range , thin and / or ultra - thin soi with thickness of 50 - 150nm and box of 70 - 180nm thick were obtained . compared to the conventional simox - soi , the soi materials manufactured by water plasma ion implantation at the same implantation dosage and ion energy have much thicker box layers 本論文一個重要發現是以水等離子體離子注入方式所形成埋層sio _ 2厚度得到了大幅度的展寬，相比傳統simox法，其展寬幅度高達50 ，這一重要發現為降低注入時間和soi制備成本提供了有效的途徑。

The results were summarized as follows : ( 1 ) diamond - like carbon films could be fabricated by plasma source ion implantation ; it was found that different parameters such as the negative voltage , frequency , gas flux influenced sp3 bond ratio of dlcs , the paper described the effect in details and showed that diamond - like carbon films with increasing negative voltage , reducing frequency , appropriate gas flux got high proportion of sp3 bond ; dlcs prepared by psii contained a good deal of sic , the composition affected its properties ( such as the films hardness ) ; psii method could offer good adhesion to dlcs , but it caused the surface morphology to become asperity 研究結果表明： ( 1 )用全方位離子注入技術能夠制備出類金剛石膜。在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓增加、頻率降低和適中的氣體流量可以制備出含sp ~ 3鍵較多的類金剛石膜；同時發現用全方位離子注入技術制備的類金剛石膜含有大量的sic成份，這對薄膜的性能(例如硬度)影響很大；用全方位離子注入制備的薄膜其結合力得到增強，但薄膜的表面形貌差。

The gettering processes usually are estimated by gettering of au to nanocavity in silicon . in this paper , the characteristics of nanocavity gettering mechanism , diffusion and distributing of aurum and ion implantation in silicon were described . in this work , many bumps on the polishing surface of the silicon , after a he + impantation in and subsequently a hot - treatment , were observed using atomic force microscope ( afm ) 我們注意到，在研究氫、氦離子注入誘生微孔的吸除作用時多以對金雜質的吸除效果來對吸除工藝進行評估，因此本文對微孔吸除機理、金在硅中的擴散和分布以及半導體中離子注入的特點進行了描述。

The soi is of crystal quality and the box is uniform in thickness , with the interfaces of si / sioa / si smooth and sharp . we have systematically studied the dependence of the formed soi structure on the process parameters , such as ion energy , implantation dosage , substrate temperature , as well as the annealing temperature . with xtem , sims , srp , rbs , ir , raman , aes , xps and other characterization tools , it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists 本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，借助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離( simox )技術類似，存在著“劑量窗口”形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。

In the present work , water plasma ion implantation , instead of the conventional oxygen plasma ion implantation , has been employed to fabricate soi materials . the masses of the three dominant ion species in the water vapor plasma , h2o + , ho + , and o + , are very close to each other , which overcome the problem of co - existence of o and 02 in oxygen plasma source . the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much , which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose 本論文創造性地采用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料，由于水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分布彌散，使注入硅后的氧射程分布相對集中，比較容易退火后形成soi結構材料。

Carbon plasma immersion ion implantation ( piii ) into the porous silicon has been studied for the first time , and obtained intense blue light . the effect of annealing temperature on the luminescence has been investigated and results show that the luminescence intensity of sample reaches maximum after annealed at 4000c 首次研究了碳等離子體注入對多孔硅的改性，得到了強藍光發射，詳細研究了退火溫度對發光強度的影響，發現在400時達到最大值，并探討了相關的機理。

Low - energy ion implantation has been considered as a new kind of mutation breeding and foreign gene delivery techniques . by the means of implanting low - energy ions into organisms , the biological effects and the function mechanisms of the technique were investigated by some researchers 離子束生物技術是一種新型的生物誘變技術，它是通過將低能離子束注入生物體內，來研究其生物學效應和作用機理，并將它應用于遺傳育種和基因工程等方面的一種綜合技術。

The effect of ni + ion on luminescence had not been detected by fluorescence experiments for implanted doped crystals . 5 ) the xe ion peak concentration lies at a depth of about 47nm under the surface . after ion implantations , the two peaks in o1s spectrum merge into a single one ( 5 )注入的xe ~ +在距表面47nm處濃度取得最大值，離子注入使兩種類型氧格點的化學環境變得相似， o _ ( 1s )譜的兩個峰融合為一個峰。

After annealed and co ion implantation , the highest gmr of the former is higher than that of the latter . the saturation magnetic field of discontinuous multilayer films is ikoe , nine times lower than that of granular films 退火和注入co離子后， nifeco ag非連續多層膜的最大gmr效應大于nifeco ag顆粒膜的最大gmr效應，而且飽和磁場也降低了九倍，為1koe 。

In this investigation , gas barrier property of pet has been improved by plasma enhanced chemical vapor deposition ( pecvd ) and plasma immersion ion implantation ( piii ) technologies 本文通過等離子體化學氣相沉積( pecvd )和等離體浸沒離子注入( piii )技術在聚酯材料表面制備了阻隔碳膜來提高氣體阻隔性能。

Plasma immersion ion implantation ( phi ) seems to be an alternative approach to reduce the manufacture cost of soi wafers due to its large ion current and independence of implantation time to the wafer size 等離子體離子注入( p )技術由于其強束流和大面積注入方式而有希望在soi材料制備方面獲得突破。

The ion implantation is used to optimize the material . we have discussed effects of the varing doses of er ions on the structural , optical and electrical properties of the cdte films deposited on si substrate 利用這種技術實現了cdte多晶薄膜稀土離子鉺( er ) 、鏑( dy )的高濃度摻雜改性。

Contribution on chapter 6 ( diffusion ) and chapter 7 ( ion implantation ) of “ fundamentals of semiconductor fabrication ” textbook by g . s . may and s . m . sze , publication in 2003 , p105 - 143 , wiley 修正第13章，半導體元件物理與制作技術，施敏原著、黃調元譯， 91年9月出版，交通大學。

The effect of anneal and co ion implantation on the structure , surface appearance and gmr of discontinuous multilayer films is greater than those of granular films 退火和注入co離子對nifeco ag非連續多層膜結構、表面形貌和gmr效應的影響比對nifeco ag顆粒膜的影響要顯著得多。

Problems about fabrication of sige - oi substrate , low - temperature gate oxidation and source / drain ion implantation are discussed after considering technology level and reported articles 然后用二維模擬軟件medici模擬,得到器件的閾值電壓約為- 0 . 1v ,泄漏電流很小。